Method for rapid thermal treatment using high energy electromagnetic radiation of a semiconductor substrate for formation of dielectric films

ABSTRACT

A method for fabricating semiconductor devices, e.g., SONOS cell. The method includes providing a semiconductor substrate (e.g., silicon wafer, silicon on insulator) having a surface region, which has a native oxide layer. The method includes treating the surface region to a wet cleaning process to remove a native oxide layer from the surface region. In a specific embodiment, the method includes subjecting the surface region to an oxygen bearing environment and subjecting the surface region to a high energy electromagnetic radiation having wavelengths ranging from about 300 to about 800 nanometers for a time period of less than 10 milli-seconds to increase a temperature of the surface region to greater than 1000 Degrees Celsius. In a specific embodiment, the method causes formation of an oxide layer having a thickness of less than 10 Angstroms. In a preferred embodiment, the oxide layer is substantially free from pinholes and other imperfections. In a specific embodiment, the oxide layer is a gate oxide layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to Chinese Application No.200810040368.5, filed Jul. 8, 2008, commonly assigned, and incorporatedherein by reference for all purposes.

BACKGROUND OF THE INVENTION

The present invention is directed to integrated circuits and theirprocessing for the manufacture of semiconductor devices. Moreparticularly, the invention provides a method for treatment of a surfaceregion of a semiconductor substrate for dielectric material growth for aMOS transistor device, but it would be recognized that the invention hasa much broader range of applicability.

Integrated circuits have evolved from a handful of interconnecteddevices fabricated on a single chip of silicon to millions of devices.Conventional integrated circuits provide performance and complexity farbeyond what was originally imagined. In order to achieve improvements incomplexity and circuit density (i.e., the number of devices capable ofbeing packed onto a given chip area), the size of the smallest devicefeature, also known as the device “geometry”, has become smaller witheach generation of integrated circuits.

Increasing circuit density has not only improved the complexity andperformance of integrated circuits but has also provided lower costparts to the consumer. An integrated circuit or chip fabricationfacility can cost hundreds of millions, or even billions, of U.S.dollars. Each fabrication facility will have a certain throughput ofwafers, and each wafer will have a certain number of integrated circuitson it. Therefore, by making the individual devices of an integratedcircuit smaller, more devices may be fabricated on each wafer, thusincreasing the output of the fabrication facility. Making devicessmaller is very challenging, as each process used in integratedfabrication has a limit. That is to say, a given process typically onlyworks down to a certain feature size, and then either the process or thedevice layout needs to be changed. Additionally, as devices requirefaster and faster designs, process limitations exist with certainconventional processes and materials.

An example of a process that has limitations based upon a given featuresize is the formation of dielectric materials for MOS transistordevices. Such dielectric materials are often formed for devices having adesign rule of 90 nanometers and less. These dielectric materials,including silicon dioxide, are often formed for gate insulating layersfor MOS transistor devices or memory device structures such asSilicon-Oxide-Nitride-Oxide-Silicon (SONOS) cells. Unfortunately, it isoften difficult to form high quality oxide materials using conventionaltechnologies. That is, difficulties arise in making each of thesedielectric materials as device sizes decrease. These and otherlimitations of conventional dielectric structures can be foundthroughout the present specification and more particularly below.

From the above, it is seen that an improved technique for processingsemiconductor devices is desired.

BRIEF SUMMARY OF THE INVENTION

According to the present invention, techniques for processing integratedcircuits for the manufacture of semiconductor devices are provided. Moreparticularly, the invention provides a method for treatment of a surfaceregion of a semiconductor substrate for dielectric material growth for aMOS transistor device, but it would be recognized that the invention hasa much broader range of applicability.

In a specific embodiment, the present invention provides a method forfabricating semiconductor devices, e.g., SONOS. The method includesproviding a semiconductor substrate (e.g., silicon wafer, silicon oninsulator) having a surface region, which has a native oxide layer. Themethod includes treating the surface region to a wet cleaning process toremove a native oxide layer from the surface region. In a specificembodiment, the method includes subjecting the surface region to anoxygen bearing environment and subjecting the surface region to a highenergy electromagnetic radiation having wavelengths ranging from about300 to about 800 nanometers for a time period of less than 10milli-seconds to increase a temperature of the surface region to greaterthan 1000 Degrees Celsius. In a specific embodiment, the method causesformation of an oxide layer having a thickness of less than 10Angstroms. In a preferred embodiment, the oxide layer is substantiallyfree from pinholes and other imperfections. In a specific embodiment,the oxide layer is a gate oxide layer. Optionally, the method includesremoving the high energy electromagnetic radiation to cause a reductionin temperature of about 300 to about 600 Degrees Celsius in a time ofabout 1 second and less.

In an alternative specific embodiment, the present invention provides analternative method for fabricating semiconductor devices, SONOS. Themethod includes providing a semiconductor substrate having a surfaceregion, which has a native oxide layer. In a specific embodiment, themethod includes treating the surface region to a wet cleaning process toremove a native oxide layer from the surface region. In a specificembodiment, the method also includes subjecting the surface region to anoxygen bearing environment, e.g., oxygen species. In a specificembodiment, the method includes subjecting the surface region to a highenergy electromagnetic radiation having wavelengths ranging from about300 to about 800 nanometers for a time period of less than 10milli-seconds to increase a temperature of the surface region to greaterthan 1000 Degrees Celsius to cause formation of a oxide layer having athickness of less than 10 Angstroms. In a preferred embodiment, theoxide layer is substantially free from pinholes and other imperfections.In a specific embodiment, the method includes forming a nitride layeroverlying the oxide layer and forming an oxide layer overlying thenitride layer to provide an oxide on nitride on oxide stack structure.In a preferred embodiment, the method also includes forming a gatestructure (e.g., control gate) overlying the oxide on nitride on oxidestack structure.

Many benefits are achieved by way of the present invention overconventional techniques. For example, the present technique provides aneasy to use process that relies upon conventional technology. In someembodiments, the method provides higher device yields in dies per wafer.Additionally, the method provides a process that is compatible withconventional process technology without substantial modifications toconventional equipment and processes. Preferably, the invention providesfor a rapid thermal treatment process that reduces a thermal budget ofthe integrated circuit device according to a specific embodiment.Depending upon the embodiment, one or more of these benefits may beachieved. These and other benefits will be described in more throughoutthe present specification and more particularly below.

Various additional objects, features and advantages of the presentinvention can be more fully appreciated with reference to the detaileddescription and accompanying drawings that follow.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified flow diagram of a method of rapid thermalprocessing according to an embodiment of the present invention.

FIGS. 2 and 3 illustrate a simplified method of rapid thermal processingto remove contaminants according to an embodiment of the presentinvention.

FIG. 4 is a simplified flow diagram of an alternative method of rapidthermal processing according to an alternative embodiment of the presentinvention.

FIGS. 5 through 8 illustrate a simplified method of fabricating anintegrated circuit device using a rapid thermal processing methodaccording to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

According to the present invention, techniques for processing integratedcircuits for the manufacture of semiconductor devices are provided. Moreparticularly, the invention provides a method for treatment of a surfaceregion of a semiconductor substrate for dielectric material growth for aMOS transistor device, but it would be recognized that the invention hasa much broader range of applicability.

Referring to FIG. 1 in a specific embodiment, the present inventionprovides a method (100) for treating a surface region for formation of adielectric material that can be outlined as follows:

1. Begin a process, step 101;

2. Provide (step 103) a semiconductor substrate (e.g., silicon wafer,silicon on insulator) having a surface region, which has a native oxidelayer;

3. Treat the surface region (step 105) to a wet cleaning process toremove a native oxide layer from the surface region;

4. Subject (step 107) the surface region to an oxygen bearingenvironment;

5. Subject (in preferred embodiments simultaneously with step 4) (step109) the surface region to a high energy electromagnetic radiationhaving wavelengths ranging from about 300 to about 800 nanometers for atime period of less than 10 milli-seconds to increase a temperature ofthe surface region to greater than 1000 Degrees Celsius;

6. Cause formation (step 111) of an oxide layer having a thickness ofless than 10 Angstroms and being substantially free from pinholes andother imperfections;

7. Remove (step 113) the high energy electromagnetic radiation to causea reduction in temperature of about 300 to about 600 Degrees Celsius ina time of about 1 second and less;

8. Perform other steps (step 115), as desired;

9. Continue (step 117) the other steps; and

10. Stop, step 119.

The above sequence of steps provides a method according to an embodimentof the present invention. As shown, the method uses a combination ofsteps including a way of forming an integrated circuit device such as anMOS device for a CMOS integrated circuit. As shown, the method includesusing a rapid thermal process for formation of a dielectric materialaccording to a specific embodiment. Other alternatives can also beprovided where steps are added, one or more steps are removed, or one ormore steps are provided in a different sequence without departing fromthe scope of the claims herein. Further details of the present methodcan be found throughout the present specification and more particularlybelow.

FIGS. 2 and 3 illustrate a simplified method of rapid thermal processingto form a dielectric layer according to an embodiment of the presentinvention. These diagrams are merely examples, which should not undulylimit the scope of the claims herein. One of ordinary skill in the artwould recognize many variations, modifications, and alternatives. Asshown, the present invention provides a method for fabricatingsemiconductor devices, e.g., SONOS. In a specific embodiment, the methodincludes providing a semiconductor substrate (e.g., silicon wafer,silicon on insulator) having a surface region, which has a native oxidelayer. In a specific embodiment, the native oxide can be a thin layer ofsilicon dioxide or other like species. Of course, there can be othervariations, modifications, and alternatives.

In a specific embodiment, the method includes treating the surfaceregion to a wet cleaning process to remove a native oxide layer from thesurface region. In a specific embodiment, the wet treatment process caninclude a hydrofluoric acid dip and/or other fluorine based treatment.In a preferred embodiment, other wet cleaning processes can be used. Ofcourse, there can be other variations, modifications, and alternatives.

In a specific embodiment, the method includes subjecting the surfaceregion to an oxygen bearing environment, as illustrated by thesimplified diagram of FIG. 3. In a specific embodiment, the oxygenbearing environment can be gaseous oxygen, water, water vapor, or othersuitable species. In a specific embodiment, the oxygen can be mixed withnitrogen and/or argon. Of course, there can be other variations,modifications, and alternatives.

Referring again to FIG. 3, the method subjects the surface region to ahigh energy electromagnetic radiation 305 having wavelengths rangingfrom about 300 to about 800 nanometers for a time period of less than 10milli-seconds to increase a temperature of the surface region to greaterthan 1000 Degrees Celsius. In a specific embodiment, the method causesformation of an oxide layer having a thickness of less than 10Angstroms. In a preferred embodiment, the oxide layer is substantiallyfree from pinholes and other imperfections. In a specific embodiment,the radiation can be derived from a flash lamp, laser, or otherirradiation source, e.g., rapid thermal treatment process. Of course,there can be other variations, modifications, and alternatives.

In a specific embodiment, the oxide layer is a gate oxide layer. Thatis, the gate oxide layer can be about 80 Angstroms and less according toa specific embodiment. The gate oxide layer can be used in a stackconfiguration, which will be described in more detail below. Optionally,the method includes removing the high energy electromagnetic radiationto cause a reduction in temperature of about 300 to about 600 DegreesCelsius in a time of about 1 second and less. In a specific embodiment,the reduction in temperature is rapid and does not lead to damage of thesilicon wafer and/or other structures. Of course, there can be othervariations, modifications, and alternatives.

The above sequence of steps provides a method according to an embodimentof the present invention. As shown, the method uses a combination ofsteps including a way of forming an integrated circuit device such as anMOS device for a CMOS integrated circuit. As shown, the method includesusing a rapid thermal process for formation of a dielectric materialaccording to a specific embodiment. Other alternatives can also beprovided where steps are added, one or more steps are removed, or one ormore steps are provided in a different sequence without departing fromthe scope of the claims herein.

Referring to FIG. 4, in an alternative specific embodiment, the presentinvention provides a method (100) for fabricating SONOS semiconductordevices, which has been outlined below.

-   -   1. Begin a start, step 401;    -   2. Provide (step 403) a semiconductor substrate (e.g., silicon        wafer, silicon on insulator) having a surface region, which has        a native oxide layer;    -   3. Treat the surface region (step 405) to a wet cleaning process        to remove a native oxide layer from the surface region;    -   4. Subject (step 407) the surface region to an oxygen bearing        environment;    -   5. Subject (in preferred embodiments simultaneously with step 4)        (step 409) the surface region to a high energy electromagnetic        radiation having wavelengths ranging from about 300 to about 800        nanometers for a time period of less than 10 milli-seconds to        increase a temperature of the surface region to greater than        1000 Degrees Celsius;    -   6. Cause formation (step 411) of an oxide layer having a        thickness of less than 10 Angstroms and being substantially free        from pinholes and other imperfections;    -   7. Remove (step 413) the high energy electromagnetic radiation        to cause a reduction in temperature of about 300 to about 600        Degrees Celsius in a time of about 1 second and less;    -   8. Form a nitride layer (step 415) overlying the oxide layer;    -   9. Form an oxide layer (step 417) overlying the nitride layer to        provide an oxide on nitride on oxide stack structure;    -   10. Form a gate structure (e.g., control gate) (step 419)        overlying the oxide on nitride on oxide stack structure;    -   11. Perform other steps (step 421), as desired;    -   12. Continue (step 423) the other steps; and    -   13. Stop, step 425.

The above sequence of steps provides a method according to an embodimentof the present invention. As shown, the method uses a combination ofsteps including a way of forming an integrated circuit device such as anMOS device for a CMOS integrated circuit. As shown, the method includesusing a rapid thermal process for removal and/or reduction ofcontaminants according to a specific embodiment. Other alternatives canalso be provided where steps are added, one or more steps are removed,or one or more steps are provided in a different sequence withoutdeparting from the scope of the claims herein. Further details of thepresent method can be found throughout the present specification andmore particularly below.

FIGS. 5 through 8 illustrate a simplified method of fabricating anintegrated circuit device using a rapid thermal processing methodaccording to an embodiment of the present invention. These diagrams aremerely examples, which should not unduly limit the scope of the claimsherein. One of ordinary skill in the art would recognize manyvariations, modifications, and alternatives. As shown, the presentinvention provides a method for fabricating semiconductor devices, e.g.,SON as. In a specific embodiment, the method includes providing asemiconductor substrate (e.g., silicon wafer, silicon on insulator)having a surface region, which has a native oxide layer. In a specificembodiment, the native oxide can be a thin layer of silicon dioxide orother like species. Of course, there can be other variations,modifications, and alternatives.

In a specific embodiment, the method includes treating the surfaceregion to a wet cleaning process to remove a native oxide layer from thesurface region. In a specific embodiment, the wet treatment process caninclude a hydrofluoric acid dip and/or other fluorine based treatment.In a preferred embodiment, other wet clearing processes can be used. Ofcourse, there can be other variations, modifications, and alternatives.

In a specific embodiment, the method includes subjecting the surfaceregion to an oxygen bearing environment, as illustrated by thesimplified diagram of FIG. 6. In a specific embodiment, the oxygenbearing environment can be gaseous oxygen, water, water vapor, or othersuitable species. In a specific embodiment, the oxygen can be mixed withnitrogen and/or argon. Of course, there can be other variations,modifications, and alternatives.

Referring again to FIG. 6, the method subjects the surface region to ahigh energy electromagnetic radiation 305 having wavelengths rangingfrom about 300 to about 800 nanometers for a time period of less than 10milli-seconds to increase a temperature of the surface region to greaterthan 1000 Degrees Celsius. In a specific embodiment, the method causesformation of an oxide layer having a thickness of less than 10Angstroms. In a preferred embodiment, the oxide layer is substantiallyfree from pinholes and other imperfections. In a specific embodiment,the radiation can be derived from a flash lamp, laser, or otherirradiation source, e.g., rapid thermal treatment process. Of course,there can be other variations, modifications, and alternatives.

In a specific embodiment, the oxide layer is a gate oxide layer. Thatis, the gate oxide layer can be about 80 Angstroms and less according toa specific embodiment. The gate oxide layer can be used in a stackconfiguration, which will be described in more detail below. Optionally,the method includes removing the high energy electromagnetic radiationto cause a reduction in temperature of about 300 to about 600 DegreesCelsius in a time of about 1 second and less. In a specific embodiment,the reduction in temperature is rapid and does not lead to damage of thesilicon wafer and/or other structures. Of course, there can be othervariations, modifications, and alternatives.

In a specific embodiment, the method continues to form an oxide onnitride on oxide layer stack as illustrated by FIG. 7. As noted, thisdiagram is merely an example, which should not unduly limit the scope ofthe claims herein. One of ordinary skill in the art would recognizeother variations, modifications, and alternatives. In a specificembodiment, the present method forms a nitride layer overlying the oxidelayer. The method forms an oxide layer overlying the nitride layer toprovide an oxide on nitride on oxide stack structure. Of course, therecan be other variations, modifications, and alternatives.

Referring to FIG. 8, the method forms a gate layer overlying the oxideon nitride on oxide stack structure. The method forms a gate structure,e.g., control gate, using a patterning technique. Such patterningtechnique can include a combination of etching and photolithographysteps. In a specific embodiment, the method also forms sidewall spacerson edges of the gate structure, including ONO stack layer. Dependingupon the embodiment, the method also includes performing other steps, asdesired. Of course, there can be other variations, modifications, andalternatives.

The above sequence of steps provides a method according to an embodimentof the present invention. As shown, the method uses a combination ofsteps including a way of forming an integrated circuit device such as anMOS device for a CMOS integrated circuit. As shown, the method includesusing a rapid thermal process for formation of a dielectric materialaccording to a specific embodiment. Other alternatives can also beprovided where steps are added, one or more steps are removed, or one ormore steps are provided in a different sequence without departing fromthe scope of the claims herein.

Although the above has been described in terms of an MOS device, therecan be other variations, modifications, and alternatives. It is alsounderstood that the examples and embodiments described herein are forillustrative purposes only and that various modifications or changes inlight thereof will be suggested to persons skilled in the art and are tobe included within the spirit and purview of this application and scopeof the appended claims.

It is also understood that the examples and embodiments described hereinare for illustrative purposes only and that various modifications orchanges in light thereof will be

suggested to persons skilled in the art and are to be included withinthe spirit and purview of this application and scope of the appendedclaims.

1. A method for fabricating semiconductor devices, the methodcomprising: providing a semiconductor substrate having a surface region,the surface region having a native oxide layer; treating the surfaceregion to a wet cleaning process to remove a native oxide layer from thesurface region; subjecting the surface region to an oxygen speciesbearing environment; subjecting the surface region to an electromagneticradiation having wavelengths ranging from about 300 to about 800nanometers for a time period of less than 10 milli-seconds to increase atemperature of the surface region to greater than 1000 Degrees Celsius;causing formation of an oxide layer having a thickness of less than 10Angstroms, the oxide layer being substantially free from pinholes andimperfections, and further comprising removing the electromagneticradiation to cause a reduction in temperature of about 300 to about 600Degrees Celsius in a time of about 1 second and less.
 2. The method ofclaim 1 wherein the oxide layer is a gate oxide layer.
 3. The method ofclaim 1 wherein the oxide layer is an interface layer.
 4. The method ofclaim 1 wherein the oxide layer is provided for an oxide on nitride onoxide structure for a SONOS device.
 5. The method of claim 1 wherein theoxygen species is mixed with a nitrogen species.
 6. The method of claim1 wherein the oxygen species is mixed with an argon species to formsubstantially pure silicon dioxide.
 7. The method of claim 1 wherein thesemiconductor substrate is a silicon wafer.
 8. The method of claim 1wherein the oxide layer is for a device having a design rule of about 45nanometers and less.
 9. The method of claim 1 wherein the surface regionis characterized by a depth of less than three microns.
 10. A method forfabricating semiconductor devices, the method comprising: providing asemiconductor substrate having a surface region, the surface regionhaving a native oxide layer; treating the surface region to a wetcleaning process to remove a native oxide layer from the surface region;subjecting the surface region to an oxygen species bearing environment;subjecting the surface region to an electromagnetic radiation havingwavelengths ranging from about 300 to about 800 nanometers for a timeperiod of less than 10 milli-seconds to increase a temperature of thesurface region to greater than 1000 Degrees Celsius; causing formationof an oxide layer having a thickness of less than 10 Angstroms, theoxide layer being substantially free from pinholes and imperfections;removing the electromagnetic radiation to cause a reduction intemperature of about 300 to about 600 Degrees Celsius in a time of about1 second and less; forming a nitride layer overlying the oxide layer;forming an oxide layer overlying the nitride layer to provide an oxideon nitride on oxide stack structure; and forming a gate structureoverlying the oxide on nitride on oxide stack structure.
 11. The methodof claim 10 wherein the oxide layer is a gate oxide layer.
 12. Themethod of claim 10 wherein the oxide layer is an interface layer. 13.The method of claim 10 wherein the oxide on nitride on oxide structurefor a SONOS device.
 14. The method of claim 10 wherein the oxygenspecies is mixed with a nitrogen species.
 15. The method of claim 10wherein the oxygen species is mixed with an argon species to formsubstantially pure silicon dioxide.
 16. The method of claim 10 whereinthe semiconductor substrate is a silicon wafer.
 17. The method of claim10 wherein the oxide layer is for a device having a design rule of about45 nanometers and less.
 18. The method of claim 10 wherein the surfaceregion has a depth of less than three microns.